The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Sep. 09, 2014
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Miyuki Izuka, Kanagawa-ken, JP;

Susumu Obata, Kanagawa-ken, JP;

Akiya Kimura, Kanagawa-ken, JP;

Akihiro Kojima, Kanagawa-ken, JP;

Yosuke Akimoto, Kanagawa-ken, JP;

Yoshiaka Sugizaki, Kanagawa-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/48 (2010.01); H01L 33/50 (2010.01); H01L 33/58 (2010.01);
U.S. Cl.
CPC ...
H01L 33/38 (2013.01); H01L 33/62 (2013.01); H01L 33/0079 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01); H01L 33/50 (2013.01); H01L 33/58 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side metal pillar, an n-side metal pillar, and an insulator. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side metal pillar includes a p-side external terminal. The n-side metal pillar includes an n-side external terminal. At least one selected from an area and a planar configuration of the p-side external terminal is different from at least one selected from an area and a planar configuration of the n-side external terminal.


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