The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Jan. 30, 2009
Applicants:

Michael R. T. Tan, Menlo Park, CA (US);

David A. Fattal, Mountain View, CA (US);

Marco Fiorentino, Mountain View, CA (US);

Shih-yuan Wang, Palo Alto, CA (US);

Inventors:

Michael R. T. Tan, Menlo Park, CA (US);

David A. Fattal, Mountain View, CA (US);

Marco Fiorentino, Mountain View, CA (US);

Shih-Yuan Wang, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/02 (2010.01); H01L 33/04 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/20 (2013.01); H01L 33/02 (2013.01); H01L 33/04 (2013.01); H01L 33/387 (2013.01);
Abstract

A light emitting diode (or) includes a diode structure containing a quantum well (), an enhancement layer (), and a barrier layer (or) between the enhancement layer () and the quantum well (). The enhancement layer () supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (). The barrier layer serves to block diffusion between the enhancement layer () and the diode structure.


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