The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Sep. 06, 2013
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventor:
Kenji Fujimoto, Ishikawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/167 (2006.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01);
Abstract
According to one embodiment, a semiconductor light emitting device includes a semiconductor laminated body provided on a semiconductor substrate. The semiconductor laminated body includes a light emitting layer. The light emitting layer includes a quantum well structure made by alternately laminating n (an integer of not less than 1) well layers and (n+1) barrier layers and emits light with a peak wavelength of 650 nm to 1000 nm. Each of the well layers has a thickness of smaller than 15 nm. Each of the barrier layers has a thickness of 15 nm to 50 nm.