The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Apr. 05, 2011
Sang Jin Moon, Daejeon, KR;
Won Wook SO, Daejeon, KR;
Myung Hoee Koo, Taejeon, KR;
Dong Soon Park, Daejeon, KR;
Sang Jin Moon, Daejeon, KR;
Won Wook So, Daejeon, KR;
Myung Hoee Koo, Taejeon, KR;
Dong Soon Park, Daejeon, KR;
Korea Research Institute of Chemical Technology, Daejeon, KR;
Abstract
The present invention relates to a high-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell, and more particularly, to an apparatus for manufacturing a polycrystal silicon ingot by means of heating and melting raw silicon in a vacuum chamber, and then cooling the molten silicon, wherein the apparatus comprises: a plurality of crucibles arranged so as to be horizontally separated from one another within the vacuum chamber, and in each of which raw silicon is filled for manufacturing polycrystal silicon ingots; heating means provided at the outside of each of the crucibles so as to heat each crucible and melt the raw silicon filled therein; and cooling means for cooling the crucibles, so as to enable the silicon melted by the heating means to be cooled in one direction and be formed into polycrystal ingots.