The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9263611 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 16, 2016

Filed:

Nov. 16, 2012
Applicant:

Solar Junction Corporation, San Jose, CA (US);

Inventors:

Onur Fidaner, San Jose, CA (US);

Michael West Wiemer, Campbell, CA (US);

Vijit A. Sabnis, Cupertino, CA (US);

Ewelina N. Lucow, Mountain View, CA (US);

Assignee:

Solar Junction Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0693 (2012.01); H01L 31/18 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 21/30612 (2013.01); H01L 31/0693 (2013.01); H01L 31/184 (2013.01); H01L 31/186 (2013.01); H01L 31/1844 (2013.01); H01L 31/1848 (2013.01); Y02E 10/544 (2013.01);
Abstract

A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.


Find Patent Forward Citations

Fidaner, Onur. (2016). Method for etching multi-layer epitaxial material (U.S. Patent No. 9263611). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9263611

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