The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Sep. 08, 2010
Leo Lau, Hong Kong, CN;
Zhifeng Ding, London, CA;
David Anthony Love, Arillia, CA;
Mohammad Harati, London, CA;
Jun Yang, London, CA;
Leo Lau, Hong Kong, CN;
Zhifeng Ding, London, CA;
David Anthony Love, Arillia, CA;
Mohammad Harati, London, CA;
Jun Yang, London, CA;
CHENGDU ARK ETERNITY PHOTOVOLTAIC TECHNOLOGY COMPANY LIMITED, Shuangliu, Chengdu, CN;
Abstract
The present invention describes a method of producing a photovoltaic solar cell with stoichiometric p-type copper indium gallium diselenide (CuInGaSe) (abbreviated CIGS) as its absorber layer and II-IV semiconductor layers as the n-type layers with electrodeposition of all these layers. The method comprises a sequence of novel procedures and electrodeposition conditions with an ionic liquid approach to overcome the technical challenges in the field for low-cost and large-area production of CIGS solar cells with the following innovative advantages over the prior art: (a) low-cost and large-area electrodeposition of CIGS in one pot with no requirement of post-deposition thermal sintering or selenization; (b) low-cost and large-area electrodeposition of n-type II-VI semiconductors for the completion of the CIGS solar cell production; and (c) low-cost and large-area deposition of a buffer layer of CdS or other compounds with a simple chemical bath method.