The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Jun. 09, 2010
Ning Qu, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
Ning Qu, Reutlingen, DE;
Alfred Goerlach, Kusterdingen, DE;
ROBERT BOSCH GMBH, Stuttgart, DE;
Abstract
A semiconductor system having a trench MOS barrier Schottky diode is described, including an n-type epitaxial layer, in which at least two etched trenches are located in a two-dimensional manner of presentation on an n-type substrate which acts as the cathode zone. An electrically floating, p-type layer, which acts as the anode zone of the p-n type diode, is located in the n-type epitaxial layer, at least in a location below the trench bottom. An oxide layer is located between a metal layer and the surface of the trenches. The n-type epitaxial layer may include two n-type layers of different doping concentrations.