The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Dec. 03, 2014
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Jung-Kyu Lee, Gyeonggi-Do, KR;
Do-Hyun Kwon, Gyeonggi-Do, KR;
Min-Jung Lee, Gyeonggi-Do, KR;
Sung-Eun Lee, Gyeonggi-Do, KR;
Moo-Soon Ko, Gyeonggi-do, KR;
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.