The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Nov. 07, 2014
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Manoj Kumar, Dhanbad, IN;
Pei-Heng Hung, New Taipei, TW;
Chia-Hao Lee, New Taipei, TW;
Chih-Cherng Liao, Jhudong Township, TW;
Shang-Hui Tu, Jhubei, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes a semiconductor layer formed over a semiconductor substrate. A well region is disposed in a portion of the semiconductor layer, and a plurality of first doped regions is disposed in various portions of the well region. A second doped region is disposed in a portion of the well region. An isolation element is disposed in a portion of the top-most one of the first doped regions, and a third doped region is disposed in a portion of the top-most one of the first doped regions. A fourth doped region is disposed in a portion of the second doped region. An insulating layer overlies the third doped region, the isolation element, the second doped region, and the fourth doped region, and a conductive layer overlies the insulating layer.