The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
May. 08, 2014
Samsung Electro-mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Jae Hoon Park, Suwon-Si, KR;
Jae Kyu Sung, Suwon-Si, KR;
In Hyuk Song, Suwon-Si, KR;
Ji Yeon Oh, Suwon-Si, KR;
Dong Soo Seo, Suwon-Si, KR;
SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A power semiconductor device may include a first conductivity type first semiconductor region; a second conductivity type second semiconductor region formed on an upper portion of the first semiconductor region; a first conductivity type third semiconductor region formed in an upper inner side of the second semiconductor region; a trench gate formed to penetrate through a portion of the first semiconductor region from the third semiconductor region; and a first conductivity type fourth semiconductor region formed below the second semiconductor region while being spaced apart from the trench gate.