The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Mar. 29, 2011
Applicant:

Richard David Price, Manchester, GB;

Inventor:

Richard David Price, Manchester, GB;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 51/05 (2006.01); H01L 27/12 (2006.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66757 (2013.01); H01L 27/1214 (2013.01); G03F 7/0002 (2013.01); H01L 27/1259 (2013.01); H01L 27/1292 (2013.01); H01L 51/0541 (2013.01);
Abstract

A transistor includes a substrate, a source terminal and a drain terminal, each terminal being supported by the substrate, and the source and drain terminal being separated by a portion of the substrate, a layer of semiconductive material deposited so as to cover the portion of the substrate and to connect the source terminal to the drain terminal, a layer of dielectric material deposited so as to cover at least a portion of the layer of semiconductive material, and a layer of electrically conductive material deposited so as to cover at least a portion of the layer of dielectric material. The layer of electrically conductive material providing a gate terminal to which a potential may be applied to control a conductivity of the layer of semiconductive material connecting the source and drain terminals.


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