The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Feb. 24, 2015
Applicant:
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Inventors:
Nobuyuki Ikarashi, Kawasaki, JP;
Masayasu Tanaka, Kawasaki, JP;
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 31/20 (2006.01); H01L 29/32 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/32 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02656 (2013.01); H01L 29/2003 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 33/007 (2013.01); H01L 33/325 (2013.01);
Abstract
A second epitaxial layer is grown epitaxially over a first epitaxial layer. The first epitaxial layer includes an epitaxially grown layer and a defect layer. The defect layer is disposed over the epitaxially grown layer and serves as a surface layer of the first epitaxial layer. The defect density of the defect layer is 5×10cmor more. Defects penetrating through the defect layer form loops in the second epitaxial layer.