The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Mar. 29, 2012
Applicants:

Heiko B. Weber, Erlangen, DE;

Michael Krieger, Röthenbach, DE;

Stefan Hertel, Roth, DE;

Florian Krach, Veitsbronn, DE;

Johannes Jobst, Fürth, DE;

Daniel Waldmann, Lambsheim, DE;

Inventors:

Heiko B. Weber, Erlangen, DE;

Michael Krieger, Röthenbach, DE;

Stefan Hertel, Roth, DE;

Florian Krach, Veitsbronn, DE;

Johannes Jobst, Fürth, DE;

Daniel Waldmann, Lambsheim, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01); H01L 29/04 (2006.01); H01L 29/167 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/045 (2013.01); H01L 29/167 (2013.01); H01L 29/365 (2013.01); H01L 29/45 (2013.01); H01L 29/78 (2013.01);
Abstract

A semiconductor component () comprising a semiconductor substrate () composed of silicon carbide and comprising separate electrodes () applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene () on silicon carbide, in such a way that a current channel is formed between the electrodes () through the semiconductor substrate ().


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