The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Jan. 07, 2013
Applicant:
Yoshinori Matsuno, Tokyo, JP;
Inventor:
Yoshinori Matsuno, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/045 (2013.01); H01L 21/78 (2013.01); H01L 23/293 (2013.01); H01L 23/3185 (2013.01); H01L 24/03 (2013.01); H01L 29/6606 (2013.01); H01L 29/872 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/0382 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0518 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13052 (2013.01); H01L 2924/13091 (2013.01);
Abstract
The present invention includes an n+ type substrate, a drift epitaxial layer formed on the n+ type substrate and having a lower concentration of impurity than the n+ type substrate, a Schottky electrode formed on the drift epitaxial layer, and a PI formed as an insulating film by covering at least an end of the Schottky electrode and an end and a side surface of the drift epitaxial layer.