The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Nov. 26, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Sungkwan Kim, Hwaseong-si, KR;
Soo-Kyung Kim, Seongnam-si, KR;
Jung-kuk Park, Anyang-si, KR;
Myung-Sun Kim, Hwaseong-si, KR;
Jaesung Yun, Suwon-si, KR;
Junetaeg Lee, Suwon-si, KR;
Hakyu Choi, Yongin-si, KR;
Abstract
A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.