The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Jun. 02, 2014
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventor:

Mariko Furuta, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14621 (2013.01); H01L 27/1464 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/14685 (2013.01);
Abstract

The present invention reduces color mixture (cross talk) and the degradation of sensitivity in a peripheral region of a pixel area to achieve a reduction of sensitivity irregularity in the pixel area. A solid-state imaging apparatus having a pixel area including a plurality of photoelectric conversion elements includes: a semiconductor substrate in which the plurality of photoelectric conversion elements are formed; a plurality of air gap formed layers which are arranged above the semiconductor substrate, and correspond to the photoelectric conversion elements in the plurality of photoelectric conversion elements, respectively; and air gaps arranged between the air gap formed layers in the plurality of air gap formed layers, respectively, wherein the air gap in a peripheral region B of the pixel area has a width larger than the air gap in a central region A of the pixel area.


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