The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Dec. 30, 2014
Applicant:
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Inventors:
Dongjo Kim, Yongin, KR;
Myounggeun Cha, Yongin, KR;
Yoonho Khang, Yongin, KR;
Soyoung Koo, Yongin, KR;
Assignee:
SAMSUNG DISPLAY CO., LTD., Yongin, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1218 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02422 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/02678 (2013.01); H01L 27/1222 (2013.01); H01L 27/3258 (2013.01); H01L 29/78603 (2013.01); H01L 29/78654 (2013.01); H01L 29/78675 (2013.01);
Abstract
Provided is a semiconductor device including a buffer layer that is on a substrate and includes an inclined surface; a crystalline silicon layer that is on the buffer layer; a gate electrode that is on the crystalline silicon layer while being insulated from the crystalline silicon layer; and a source electrode and a drain electrode that are each electrically connected to the crystalline silicon layer, the angle between the substrate and the inclined surface being in a range of about 17.5 degrees to less than about 70 degrees.