The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Aug. 22, 2014
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Sang Ho Park, Suwon-Si, KR;
Yoon Ho Khang, Yongin-Si, KR;
Se Hwan Yu, Seoul, KR;
Yong Su Lee, Hwaseong-Si, KR;
Chong Sup Chang, Hwaseong-Si, KR;
Myoung Geun Cha, Seoul, KR;
Hyun Jae Na, Seoul, KR;
SAMSUNG DISPLAY CO., LTD, Yongin, Gyeonggi-Do, KR;
Abstract
A thin film transistor array panel according to an exemplary embodiment of the present disclosure includes: an insulating substrate; a gate electrode disposed on the insulating substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; a source electrode and a drain electrode disposed on the semiconductor; an ohmic contact layer disposed at an interface between at least one of the source and drain electrodes and the semiconductor. Surface heights of the source and drain electrodes different, while surface heights of the semiconductor and the ohmic contact layer are the same. The ohmic contact layer is made of a silicide of a metal used for the source and drain electrodes.