The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Jun. 26, 2012
Applicant:
Kanta Saino, Tokyo, JP;
Inventor:
Kanta Saino, Tokyo, JP;
Assignee:
PS4 Luxco S.a.r.l., Luxembourg, LU;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10894 (2013.01); H01L 27/10873 (2013.01); H01L 27/10885 (2013.01); H01L 27/105 (2013.01); H01L 27/10852 (2013.01);
Abstract
A semiconductor device comprises a semiconductor substrate, a first transistor including a gate insulating film and a gate electrode sequentially formed on the semiconductor substrate, a sidewall, an interlayer insulating film formed on the semiconductor substrate, and a contact plug which penetrates through the interlayer insulating film and reaches the semiconductor substrate. The sidewall is formed on a side surface of the gate electrode, and includes a first insulating film and a second insulating film formed on the first insulating film and containing a metal oxide different from the first insulating film.