The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Apr. 30, 2014
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Hsiung-Shih Chang, Taichung, TW;
Jui-Chun Chang, Hsinchu, TW;
Shang-Hui Tu, Jhubei, TW;
Priyono Tri Sulistyanto, Yogyakarta, ID;
Chia-Hao Lee, New Taipei, TW;
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor device includes: a semiconductor layer; a first doped well region disposed in a portion of the semiconductor layer; a first doped region disposed in the first doped well region; a second doped well region of an asymmetrical cross-sectional profile disposed in another portion of the semiconductor layer; second, third, and fourth doped regions formed in the second doped well region; a first gate structure disposed over a portion of the semiconductor layer, practically covering the second doped well region; and a second gate structure embedded in a portion of the semiconductor layer, penetrating a portion of the second doped well region.