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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9263435 B1

PDFFull Text
Date of Patent:
Feb. 16, 2016

Filed:

Sep. 30, 2011

Switching element with a series-connected junction fet (jfet) and mosfet achieving both improved withstand voltage and reduced on-resistance

Applicants:

Takamitsu Kanazawa, Kanagawa, JP;

Satoru Akiyama, Tokyo, JP;

Inventors:

Takamitsu Kanazawa, Kanagawa, JP;

Satoru Akiyama, Tokyo, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Stephen W Smoot

Assistant Examiner:

Vicki B Booker

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 27/06 (2006.01); H01L 21/82 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 23/495 (2006.01); H01L 29/808 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0617 (2013.01); H01L 21/8213 (2013.01); H01L 23/4952 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/34 (2013.01); H01L 24/37 (2013.01); H01L 24/40 (2013.01); H01L 24/49 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 29/8083 (2013.01); H01L 23/3107 (2013.01); H01L 24/06 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 29/1066 (2013.01); H01L 29/1608 (2013.01); H01L 29/7802 (2013.01); H01L 2224/04034 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/291 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/3701 (2013.01); H01L 2224/3702 (2013.01); H01L 2224/40105 (2013.01); H01L 2224/40145 (2013.01); H01L 2224/40247 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/73221 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13062 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/30107 (2013.01);
Abstract

Technology capable of improving reliability of a semiconductor device is provided. In the present invention, a gate pad GPj formed on a front surface of a semiconductor chip CHPis disposed so as to be closer to a source lead SL than to other leads (a drain lead DL and a gate lead GL). As a result, according to the present invention, a distance between the gate pad GPj and the source lead SL can be shortened, and thus a length of the wire Wgj for connecting the gate pad GPj and the source lead SL together can be shortened. Thus, according to the present invention, a parasitic inductance that is present in the wire Wgj can be sufficiently reduced.

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