The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

May. 07, 2015
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Tsuyoshi Kanki, Kawasaki, JP;

Yoshihiro Nakata, Kawasaki, JP;

Yasushi Kobayashi, Kawasaki, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/288 (2006.01); H01L 21/321 (2006.01); H01L 23/532 (2006.01); H05K 3/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/02068 (2013.01); H01L 21/02071 (2013.01); H01L 21/02074 (2013.01); H01L 21/288 (2013.01); H01L 21/321 (2013.01); H01L 21/76834 (2013.01); H01L 21/76841 (2013.01); H01L 21/76852 (2013.01); H01L 21/76885 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01); H05K 3/24 (2013.01);
Abstract

After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu—N—R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu—N—R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.


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