The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Sep. 12, 2013
Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Satoshi Okada, Toyama, JP;

Kosuke Takagi, Toyama, JP;

Yukinao Kaga, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/263 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/263 (2013.01); C23C 16/34 (2013.01); C23C 16/402 (2013.01); C23C 16/45542 (2013.01); C23C 16/45546 (2013.01);
Abstract

Provided are a reaction tube, a substrate processing apparatus, and a method of manufacturing a semiconductor device capable of suppressing a non-uniform distribution of a gas in a top region to improve the flow of the gas and film uniformity within and between substrate surfaces. The reaction tube has a cylindrical shape, accommodates a plurality of substrates stacked therein, and includes a cylindrical portion and a ceiling portion covering an upper end portion of the cylindrical portion, the ceiling portion having a substantially flat top inner surface. A thickness of a sidewall of the ceiling portion is greater than that of a sidewall of the cylindrical portion.


Find Patent Forward Citations

Loading…