The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Aug. 29, 2014
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Shashank Sharma, San Jose, CA (US);
Shankar Muthukrishnan, San Jose, CA (US);
Abhilash J. Mayur, Salinas, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/48 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02683 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01);
Abstract
A method is disclosed for crystallizing semiconductor material so that it has large grains of uniform size comprising delivering a first energy exposure of high intensity and short duration, and then delivering at least one second energy exposures of low intensity and long duration. The first energy exposure heats the substrate to a high temperature for a duration less than about 0.1 sec. The second energy exposure heats the substrate to a lower temperature for a duration greater than about 0.1 sec.