The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Mar. 14, 2012
Applicants:
Lianhe LI, Leeds, GB;
Alexander Davies, Leeds, GB;
Edmund Linfield, Leeds, GB;
Inventors:
Assignee:
University of Leeds, Leeds, GB;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); B82Y 20/00 (2011.01); H01L 21/20 (2006.01); H01L 21/306 (2006.01); H01S 5/12 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02661 (2013.01); B82Y 20/00 (2013.01); H01L 21/02 (2013.01); H01L 21/0243 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02395 (2013.01); H01L 21/02463 (2013.01); H01L 21/02546 (2013.01); H01L 21/02631 (2013.01); H01L 21/20 (2013.01); H01L 21/306 (2013.01); H01S 5/1231 (2013.01); H01S 5/3412 (2013.01); H01S 2304/02 (2013.01);
Abstract
A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed. The method includes arranging the body in a vacuum chamber and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidized surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed.