The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
May. 05, 2011
Norbert Auner, Glashuetten, DE;
Christian Bauch, Muldenstein, DE;
Rumen Deltschew, Leipzig, DE;
Sven Holl, Gueckingen, DE;
Javad Mohsseni, Halle / Saale, DE;
Gerd Lippold, Leipzig, DE;
Norbert Auner, Glashuetten, DE;
Christian Bauch, Muldenstein, DE;
Rumen Deltschew, Leipzig, DE;
Sven Holl, Gueckingen, DE;
Javad Mohsseni, Halle / Saale, DE;
Gerd Lippold, Leipzig, DE;
Spawnt Private S.à.r.l., Luxembourg, LU;
Abstract
The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.