The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Sep. 30, 2013
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Yasushi Kurosawa, Niigata, JP;
Shigeyoshi Netsu, Niigata, JP;
SHIN-ETSU CHEMICAL CO., LTD., Tokyo, JP;
Abstract
In a method according to the present invention, an occurrence ratio of popcorn is suppressed by adjusting kinetic energy of a source gas supplied to a reaction furnace for producing polycrystalline silicon with a Siemens method (flow velocity and a supply amount of the source gas in source gas supply nozzle ejection ports). Specifically, in performing deposition reaction of the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa, when flow velocity of the source gas in gas supply ports of the source gas supply nozzles () is represented as u (m/sec), a source gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace () is represented as V (m), values of u and Q of each of the source gas supply nozzles () are set such that a total Σ(Q×u/V) of values Q×u/V is equal to or larger than 2500 (kg/m·sec).