The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

May. 30, 2012
Applicants:

David Bowie Cruickshank, Rockville, MD (US);

Rickard Paul O'donovan, Dunmanway, IE;

Iain Alexander Macfarlane, Midleton, IE;

Brian Murray, Belgooly, IE;

Michael David Hill, Frederick, MD (US);

Inventors:

David Bowie Cruickshank, Rockville, MD (US);

Rickard Paul O'donovan, Dunmanway, IE;

Iain Alexander MacFarlane, Midleton, IE;

Brian Murray, Belgooly, IE;

Michael David Hill, Frederick, MD (US);

Assignee:

Skyworks Solutions, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01F 10/24 (2006.01); H01P 1/387 (2006.01); H01F 1/34 (2006.01); C30B 29/28 (2006.01);
U.S. Cl.
CPC ...
H01F 10/24 (2013.01); H01F 1/346 (2013.01); H01P 1/387 (2013.01); C30B 29/28 (2013.01);
Abstract

Disclosed are synthetic garnets and related devices that can be used in radio-frequency (RF) applications. In some embodiments, such RF devices can include garnets having reduced or substantially nil Yttrium or other rare earth metals. Such garnets can be configured to yield high dielectric constants, and ferrite devices, such as TM-mode circulators/isolators, formed from such garnets can benefit from reduced dimensions. Further, reduced or nil rare earth content of such garnets can allow cost-effective fabrication of ferrite-based RF devices. In some embodiments, such ferrite devices can include other desirable properties such as low magnetic resonance linewidths. Examples of fabrication methods and RF-related properties are also disclosed.


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