The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Apr. 06, 2015
Applicant:

Seagate Technology Llc, Cupertino, CA (US);

Inventors:

YoungPil Kim, Eden Prairie, MN (US);

Dadi Setiadi, Edina, MN (US);

Wei Tian, Eden Prairie, MN (US);

Antoine Khoueir, Apple Valley, MN (US);

Rodney V. Bowman, Bloomington, MN (US);

Assignee:

Seagate Technology LLC, Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 11/56 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 16/16 (2013.01); G11C 2013/0073 (2013.01); G11C 2211/5646 (2013.01);
Abstract

Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In some embodiments, an apparatus includes an array of memory cells and a dual polarity charge pump. The dual polarity charge pump has a positive polarity voltage source which applies a positive voltage to a charge storage device to program a selected memory cell to a first programming state, and a negative polarity voltage source which applies a negative voltage to the charge storage device to program the selected memory cell to a different, second programming state.


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