The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Nov. 29, 2013
Freescale Semiconductor, Inc., Austin, TX (US);
Bradley J. Garni, Austin, TX (US);
Huy Van V. Pham, Cedar Park, TX (US);
Glenn E. Starnes, Austin, TX (US);
Mark Jetton, Austin, TX (US);
Thomas W. Liston, Austin, TX (US);
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Abstract
A bypass system and method that mimics read timing of a memory system which includes a self-timing circuit and a sense amplifier. When prompted, the self-timing circuit initiates the sense amplifier to evaluate its differential input. The bypass system includes a memory controller that is configured to provide a bypass enable, to prompt the self-timing circuit, and to disable normal read control when a bypass read operation is indicated. A bypass latch latches an input data value, converts the input data value into an input complementary pair, and provides the complementary pair to the differential input of the sense amplifier. The sense amplifier, when initiated, evaluates the input complementary pair after its self-timing period and provides an output data value. The bypass latch and self-timing circuit may operate synchronous with a read clock in a read domain of the memory for more accurate memory read timing.