The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2016
Filed:
Feb. 18, 2014
Reflective mask blank for euv lithography, and reflective layer-coated substrate for euv lithography
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Takeru Kinoshita, Chiyoda-ku, JP;
Asahi Glass Company, Limited, Chiyoda-ku, JP;
Abstract
To provide a mask blank for EUVL wherein the incident angle dependence of EUV reflectivity and the film stress in a Mo/Si multilayer reflective film are improved, and a reflective layer-equipped substrate for such a mask blank. The reflective layer-equipped substrate for EUV lithography (EUVL), comprises a substrate, and a reflective layer for reflecting EUV light, formed on the substrate, wherein the reflective layer comprises a second multilayer reflective film having a Mo layer and a Si layer alternately stacked plural times on the substrate, an adjustment layer stacked on the second multilayer reflective film, and a first multilayer reflective film having a Mo layer and a Si layer alternately stacked plural times on the adjustment layer.