The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Feb. 20, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Sang-Kyu Yoon, Asan-si, KR;

Sang-Joon Ryu, Asan-si, KR;

Hwa-Cheol Lee, Cheonan-si, KR;

Yong-Hwan Cho, Asan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/00 (2006.01); G01K 13/00 (2006.01); G01K 3/00 (2006.01); G01K 1/00 (2006.01); G01R 31/26 (2014.01); G01R 31/28 (2006.01); G11C 29/06 (2006.01); G11C 29/56 (2006.01); G11C 11/40 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2642 (2013.01); G01R 31/2856 (2013.01); G11C 29/06 (2013.01); G11C 29/56 (2013.01); G11C 29/56016 (2013.01); G01R 31/2874 (2013.01); G11C 11/40 (2013.01);
Abstract

To measure an inner temperature of a chamber included in a test handler, self-refresh currents of semiconductor memory devices under test are measured. The semiconductor memory devices are disposed in the chamber and have a function of linear temperature compensated self-refresh (Li-TCSR). Local temperature values are generated based on the self-refresh currents, where each local temperature value indicates a temperature near the corresponding semiconductor memory device of the semiconductor memory devices under test.


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