The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Mar. 03, 2010
Applicants:

Bilge Yilmaz, New York, NY (US);

Ulrich Müller, Neustadt, DE;

Feng-shou Xiao, Changchun, CN;

Hermann Gies, Sprockhövel, DE;

Takashi Tatsumi, Kawasaki, JP;

Dirk DE Vos, Holsbeek, BE;

Xinhe Bao, Dalian, CN;

Weiping Zhang, Dalian, CN;

Inventors:

Bilge Yilmaz, New York, NY (US);

Ulrich Müller, Neustadt, DE;

Feng-Shou Xiao, Changchun, CN;

Hermann Gies, Sprockhövel, DE;

Takashi Tatsumi, Kawasaki, JP;

Dirk de Vos, Holsbeek, BE;

Xinhe Bao, Dalian, CN;

Weiping Zhang, Dalian, CN;

Assignees:

BASF SE, Ludwigshafen, DE;

Tokyo Institute of Technology, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J 29/04 (2006.01); C01B 39/00 (2006.01); C04B 35/622 (2006.01); C01B 37/00 (2006.01); C01B 31/02 (2006.01); C01B 37/02 (2006.01); C01B 39/02 (2006.01); C01B 39/46 (2006.01); C01B 39/48 (2006.01); C04B 35/16 (2006.01);
U.S. Cl.
CPC ...
C01B 37/005 (2013.01); C01B 31/02 (2013.01); C01B 37/02 (2013.01); C01B 39/026 (2013.01); C01B 39/46 (2013.01); C01B 39/48 (2013.01); C04B 35/16 (2013.01); C04B 2235/3201 (2013.01); C04B 2235/3222 (2013.01); C04B 2235/3427 (2013.01); C04B 2235/5409 (2013.01);
Abstract

The present invention relates to a process for the preparation of a silicate compound, comprising (1) providing at least one layered silicate; and (2) mixing said layered silicate with water and at least one silicon containing compound according to formula RSi[—(SiR)—R]wherein at least one residue R is a leaving group and none of the residues R contains Si; m is 0, 1, 2, 3, or 4; and n is an integer greater than or equal to 0.


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