The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 2016

Filed:

Jul. 30, 2013
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Kentaro Matsunaga, Mie-ken, JP;

Nobuhiro Komine, Aichi-ken, JP;

Eiji Yoneda, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); B82Y 10/00 (2011.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 7/0002 (2013.01); H01L 21/0273 (2013.01);
Abstract

According one embodiment, a pattern formation method forming a resist layer on a pattern formation surface by pressing a template provided with a concave-convex from above the resist layer to form a resist pattern on the pattern formation surface, includes: forming a resist layer in a first region having an area smaller than an area of the pattern formation surface and in a second region other than the first region of the pattern formation surface; pressing a template against the resist layer; irradiating the resist layer with light via the template to form a first resist layer in the first region, curing of the first resist layer being suppressed, and form the resist pattern including a second resist layer, curing of the second resist layer proceeds in the second region; and removing the first resist layer from the first region, the curing of the first resist layer being suppressed.


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