The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Nov. 14, 2014
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventors:
Masami Endo, Kanagawa, JP;
Takuro Ohmaru, Kanagawa, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01); G11C 7/00 (2006.01); G11C 8/00 (2006.01); H03K 3/356 (2006.01); H03K 21/02 (2006.01); H03K 21/40 (2006.01); H03K 3/012 (2006.01);
U.S. Cl.
CPC ...
H03K 3/356008 (2013.01); H03K 3/012 (2013.01); H03K 21/023 (2013.01); H03K 21/403 (2013.01);
Abstract
A semiconductor device includes a first latch, a second latch and a transistor whose semiconductor layer contains an oxide semiconductor. An input of the first latch is electrically connected to one of a source and a drain of the transistor, an output of the first latch is electrically connected to an input of the second latch, and an output of the second latch is electrically connected to the other of the source or the drain of the transistor.