The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jun. 25, 2014
Mitsubishi Electric Corporation, Tokyo, JP;
Kenichi Horiguchi, Tokyo, JP;
Masakazu Hirobe, Tokyo, JP;
Satoshi Miho, Tokyo, JP;
Yoshinobu Sasaki, Tokyo, JP;
Kazuya Yamamoto, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a power amplifier for amplifying RF signals in multiple frequency bands, an output matching circuit connected to an output of the power amplifier, a first capacitor connected at a first end to an output of the output matching circuit, multiple output paths, a switch connected to a second end of the first capacitor and directing each of the RF signals to a respective one of the output paths in accordance with frequency band of the each of the RF signals, and multiple second capacitors. Each second capacitor is connected in series to a respective one of the output paths. The switch and either the first capacitor or the second capacitors, or both the first and second capacitors, are integrated as a single monolithic microwave integrated circuit.