The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Nov. 26, 2009
Applicants:

Henning Sirringhaus, Cambridge, GB;

Michael C. Gwinner, Balingen, DE;

Harald Giessen, Mannheim, DE;

Heinz Clemens Schweizer, Stuttgart, DE;

Inventors:

Henning Sirringhaus, Cambridge, GB;

Michael C. Gwinner, Balingen, DE;

Harald Giessen, Mannheim, DE;

Heinz Clemens Schweizer, Stuttgart, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); H01L 51/52 (2006.01); H01S 5/36 (2006.01); H01L 51/05 (2006.01); H01S 5/10 (2006.01); H01S 5/12 (2006.01); H01S 5/187 (2006.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5203 (2013.01); H01L 51/0558 (2013.01); H01L 51/5275 (2013.01); H01S 5/36 (2013.01); H01L 51/0508 (2013.01); H01L 51/0512 (2013.01); H01L 51/0541 (2013.01); H01L 51/0545 (2013.01); H01L 51/0562 (2013.01); H01L 51/0566 (2013.01); H01L 51/0583 (2013.01); H01S 5/105 (2013.01); H01S 5/12 (2013.01); H01S 5/187 (2013.01); H01S 5/22 (2013.01); H01S 5/3004 (2013.01);
Abstract

The present invention relates integrated optoelectronic devices comprising light emitting field-effect transistors. We describe an optoelectronic device comprising a light-emitting field effect transistor (LFET) with an organic semiconductor active layer and a waveguide integrated within the channel of the light-emitting field effect transistor, wherein said waveguide comprises a material which has a higher refractive index than said organic semiconductor. We also describe a light-emitting organic field transistor integrated with a ridge or rib waveguide incorporated within the channel of the LFET; and a similar light-emitting organic field effect transistor in which the waveguide incorporates an optical feedback mechanism.


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