The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Dec. 06, 2013
Applicant:
Lg Electronics Inc., Seoul, KR;
Inventor:
Chisun Kim, Seoul, KR;
Assignee:
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/205 (2006.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02458 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/02513 (2013.01); H01L 21/02614 (2013.01); H01L 21/02642 (2013.01); H01L 21/02658 (2013.01); H01L 29/0688 (2013.01); H01L 29/205 (2013.01); H01L 33/025 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01);
Abstract
Provided is a hetero-substrate that may include a base substrate, a buffer layer disposed on the base substrate, and a first semiconductor layer disposed on the buffer layer, the first semiconductor layer including a nitride semiconductor. A defect blocking layer is disposed on the first semiconductor layer. The defect blocking layer may include a plurality of metal droplets. A second semiconductor layer may be disposed on the defect blocking layer, the second semiconductor layer including a nitride semiconductor.