The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Sep. 17, 2013
Sanyo Electric Co., Ltd., Osaka, JP;
Taiki Hashiguchi, Kaizuka, JP;
Yutaka Kirihata, Kaizuka, JP;
Abstract
There is provided a method of producing a photovoltaic element comprising: a first step in which an i-type amorphous silicon layer () and an n-type amorphous silicon layer () are formed over a light-receiving surface of an n-type monocrystalline silicon substrate (); a second step in which an i-type amorphous silicon layer () and an n-type amorphous silicon layer () are formed over a back surface of the n-type monocrystalline silicon substrate (); and a third step in which, after the first step and the second step are completed, protection layers are formed over the n-type amorphous silicon layer () and the n-type amorphous silicon layer ().