The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Aug. 21, 2014
Applicant:
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute-shi, Aichi-ken, JP;
Inventors:
Cristiano Niclass, Nagakute, JP;
Mineki Soga, Nagakute, JP;
Assignee:
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); H01L 31/107 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 27/1446 (2013.01);
Abstract
A first semiconductor layer serves as a first implanted layer of a first conductivity type. A second semiconductor layer of a second conductivity type is provided under the first semiconductor layer. The second conductivity type is opposite to the first conductivity type. The second semiconductor layer is buried in an epitaxial layer grown above a substrate. The second semiconductor layer becomes fully depleted when an appropriate bias voltage is applied to the device.