The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Aug. 21, 2013
Sony Corporation, Tokyo, JP;
Shigeru Kanematsu, Kanagawa, JP;
Masashi Yanagita, Kanagawa, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
A diode includes a first semiconductor layer configured by a compound semiconductor containing impurities of a first conductivity type; a high dislocation density region; a second semiconductor layer which is laminated on the first semiconductor layer, which is lower in a concentration of impurities in a region of a side of an interface with the first semiconductor layer than that of the first semiconductor layer, and which has an opening in which a portion which corresponds to the high dislocation density region is removed; an insulating film pattern which is provided to cover an inner wall of the opening; an electrode which is provided so as to cover the insulating film pattern and to contact the second semiconductor layer; and an opposing electrode which is provided to interpose the first semiconductor layer, the second semiconductor layer and the insulating film pattern between the electrode and the opposing electrode.