logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9257570 B1

PDFFull Text
Expired
Date of Patent:
Feb. 09, 2016

Filed:

Jan. 23, 2014

Semiconductor memory device and method for manufacturing the same

Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Hiroyasu Sato, Mie-ken, JP;

Hiroaki Naito, Mie-ken, JP;

Satoshi Nagashima, Mie-ken, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Zandra Smith

Assistant Examiner:

Lawrence Tynes, Jr

Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/764 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7881 (2013.01); H01L 21/28273 (2013.01); H01L 21/764 (2013.01); H01L 27/11521 (2013.01); H01L 29/66825 (2013.01);
Abstract

A semiconductor memory device according to an embodiment includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a plurality of first electrodes provided on the first insulating film, a second insulating film provided on a side surface of the first electrodes and on an upper surface of the first electrodes, and a second electrode insulated from the first electrodes by the second insulating film. The second electrode includes an interconnect portion provided on the second insulating film, and a downward-extending portion extending into a space between the first electrodes from the interconnect portion. A lower end portion of the downward-extending portion is not covered with the second insulating film.

Find Patent Forward Citations

Sato, Hiroyasu. (2016). Semiconductor memory device and method for manufacturing the same (U.S. Patent No. 9257570). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9257570

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…