The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jun. 17, 2014
Applicant:
YE Xin Technology Consulting Co., Ltd., Hsinchu, TW;
Inventors:
Chih-Lung Lee, Hsinchu, TW;
Po-Li Shih, Hsinchu, TW;
Assignee:
Ye Xin Technology Consulting Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/66969 (2013.01);
Abstract
A thin film transistor (TFT) includes a gate, a drain, a source, an insulating layer, a metal oxide layer, and an etch stopper layer. The metal oxide layer includes a source area, a drain area, and a channel area. The source is electrically coupled to the source area and the drain is electrically coupled to the drain area. Oxygen ions are implanted into the channel area via a surface treatment process to make an oxygen concentration of the channel area be greater than an oxygen concentration of each of the source area and the drain area.