The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jan. 09, 2015
Applicant:
Renesas Electronics Corporation, Kanagawa, JP;
Inventor:
Shunji Kubo, Kanagawa, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0615 (2013.01); H01L 29/0653 (2013.01); H01L 29/0692 (2013.01); H01L 29/0696 (2013.01); H01L 29/086 (2013.01); H01L 29/0847 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/66659 (2013.01); H01L 29/66689 (2013.01); H01L 29/7835 (2013.01); H01L 29/0878 (2013.01); H01L 29/1045 (2013.01); H01L 29/4238 (2013.01); H01L 29/42368 (2013.01);
Abstract
An N type well (NW) is formed over a prescribed depth from a main surface of a semiconductor substrate (SUB), and a P type well (PW) and an N type drain region (ND) are formed in the N type well (NW). An N type source region (NS), an N+ type source region (NNS), and a P+ type impurity region (BCR) are formed in the P type well (PW). The N type source region (NS) is formed on a region situated directly below the N+ type source region (NNS), and not on a region situated directly below the P+ type impurity region (BCR), and the P+ type impurity region (BCR) is in direct contact with the P type well (PW).