The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jul. 21, 2014
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Kenji Hatori, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Chiyoda-ku, JP;
Abstract
A power semiconductor device includes a resistance control structure disposed in a central portion of a semiconductor substrate having a resistance to a current higher than in a peripheral portion of the substrate surrounding the central portion. The semiconductor includes a first semiconductor layer of a first conductivity type which extends laterally to run across the central portion and the peripheral portion, and a second semiconductor layer of a second conductivity type which faces the first semiconductor layer in a thickness direction and extends laterally to run across the central portion and the peripheral portion. A lifetime control layer is provided in the first semiconductor layer, extends laterally to run across the central portion and the peripheral portion and has a higher lifetime killer concentration in the central portion than the peripheral portion. The resistance control structure includes the lifetime control layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile