The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Jul. 24, 2013
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/402 (2013.01); H01L 29/8611 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate having one main surface in which an anode of a diode is formed. At a distance from the outer periphery of the anode, a guard ring is formed to surround the anode. The anode includes a p-type diffusion region, a p-type region, and an anode electrode. The p-type region is formed as a region of relatively high electrical resistance sandwiched between the p-type diffusion regions.