The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Dec. 07, 2012
Applicant:

Korea University Research and Business Foundation, Seoul, KR;

Inventors:

Kungwon Rhie, Chungcheongnam-do, KR;

Jin Ki Hong, Seoul, KR;

Tae-Yueb Kim, Seoul, KR;

Sung-Jung Joo, Seoul, KR;

Jin-Seo Lee, Ansan-si, KR;

Ku-Youl Jung, Seoul, KR;

Dong-Seok Kim, Daegu, KR;

Sun-Il Han, Suncheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/82 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66984 (2013.01); H01L 29/784 (2013.01); H01L 29/82 (2013.01); G11C 11/161 (2013.01);
Abstract

A magnetic field effect transistor is presented. A magnetic field effect transistor comprises a current control part and a magnetic field applying part. A current control part comprises multiple electrodes and a current flowing material region located between multiple electrodes and in which the amount of current flowing between the electrodes is changed, and a magnetic field applying part applying a magnetic field generating from a magnetization state, which changes according to external input, of a pre-set material. By controlling current by using magnetic fields, high speed operation is possible as charging time is not required, and calculation results may be stored without external power supply because magnetic field is supplied by altering magnetization state of a material according to external input.


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