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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9257524 B1

PDFFull Text
Expired
Date of Patent:
Feb. 09, 2016

Filed:

Mar. 08, 2013

Layered film including heteroepitaxial pn junction oxide thin film

Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Kazuya Maekawa, Tokyo, JP;

Kunihiro Ueda, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Matthew Reames

Assistant Examiner:

Vincent Wall

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/861 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66136 (2013.01); H01L 21/02381 (2013.01); H01L 21/02483 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 21/02631 (2013.01); H01L 29/12 (2013.01); H01L 29/861 (2013.01);
Abstract

Semiconductors of different types are formed by a crystal growth technique and joined at the interface at which rapid atomic-layer-level compositional changes occur while maintaining high crystallinity of the semiconductor layers so as to form a heterogeneous PN junction. A layered film that includes a PN junction oxide thin film is formed on a single crystal substrate. The PN junction oxide thin film is constituted by an N-type semiconductor oxide thin film and a P-type semiconductor oxide thin film that are epitaxially grown to have c-axis orientation represented by (00k).

Find Patent Forward Citations

Maekawa, Kazuya. (2016). Layered film including heteroepitaxial pn junction oxide thin film (U.S. Patent No. 9257524). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9257524

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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