The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Mar. 08, 2013
Applicant:
Tdk Corporation, Tokyo, JP;
Inventors:
Kazuya Maekawa, Tokyo, JP;
Kunihiro Ueda, Tokyo, JP;
Assignee:
TDK CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/861 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66136 (2013.01); H01L 21/02381 (2013.01); H01L 21/02483 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02505 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/02581 (2013.01); H01L 21/02631 (2013.01); H01L 29/12 (2013.01); H01L 29/861 (2013.01);
Abstract
Semiconductors of different types are formed by a crystal growth technique and joined at the interface at which rapid atomic-layer-level compositional changes occur while maintaining high crystallinity of the semiconductor layers so as to form a heterogeneous PN junction. A layered film that includes a PN junction oxide thin film is formed on a single crystal substrate. The PN junction oxide thin film is constituted by an N-type semiconductor oxide thin film and a P-type semiconductor oxide thin film that are epitaxially grown to have c-axis orientation represented by (00k).