The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2016
Filed:
Aug. 27, 2012
Applicants:
Chang-seung Lee, Yongin-si, KR;
Joo-ho Lee, Hwaseong-si, KR;
Yong-sung Kim, Namyangju-si, KR;
Jun-seong Kim, Yongin-si, KR;
Chang-youl Moon, Suwon-si, KR;
Inventors:
Chang-seung Lee, Yongin-si, KR;
Joo-ho Lee, Hwaseong-si, KR;
Yong-sung Kim, Namyangju-si, KR;
Jun-seong Kim, Yongin-si, KR;
Chang-youl Moon, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/683 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1606 (2013.01); H01L 21/6835 (2013.01); H01L 29/66787 (2013.01); H01L 29/778 (2013.01); H01L 29/41758 (2013.01); H01L 29/41775 (2013.01); H01L 29/42384 (2013.01); H01L 29/7831 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68381 (2013.01);
Abstract
Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer.