The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2016

Filed:

Dec. 23, 2013
Applicants:

Hidefumi Takaya, Miyoshi, JP;

Masaru Nagao, Yatomi, JP;

Narumasa Soejima, Seto, JP;

Inventors:

Hidefumi Takaya, Miyoshi, JP;

Masaru Nagao, Yatomi, JP;

Narumasa Soejima, Seto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0623 (2013.01); H01L 29/0649 (2013.01); H01L 29/0661 (2013.01); H01L 29/4238 (2013.01); H01L 29/42372 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/1608 (2013.01); H01L 29/42368 (2013.01); H01L 29/7397 (2013.01);
Abstract

A semiconductor substrate of a semiconductor device includes a first conductive body region that is formed in the element region; a second conductive drift region that is formed in the element region; a gate electrode that is formed in the element region, that is arranged in a gate trench, and that faces the body region; an insulating body that is formed in the element region and is arranged between the gate electrode and an inside wall of the gate trench; a first conductive floating region that is formed in the element region and that is surrounded by the drift region; a first voltage-resistance retaining structure that is formed in the peripheral region and that surrounds the element region; and a gate pad that is formed in the peripheral region, and is electrically connected to the gate electrode in a position on the element region-side of the first voltage-resistance retaining structure.


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